Our know-how realised in our unique CdTe-CMOS conversion technology
The basic component in our detectors is a direct conversion material, which converts the x-rays into electrical signals, and a CMOS (ASIC) which transforms the electric signals into a datastream of either the integrated electric charge or the number of photons which has entered each pixel. This data is then used to create a digital image which is either two- or threedimensional, depending on the scan geometry.
Our detectors use CdTe as the direct conversion material. When an x-ray photon enters the material it is converted directly to an electric signal which is captured, measured and finally processed into an image. This provides significantly better MTF (Modulation Transfer Function) and DQE (Detection Quantum Efficiency) compared to scintillation detectors due to the high sensitivity and very good stopping power for high energy photons. By combining the CdTe conversion layer with our custom ASICs (CMOS) we can supply detectors that support integrating as well as photon counting modes, fast readout and low power consumption.