We were the first to bring the power of affordable hybrid photon counting detectors to the mainstream. The images generated by our photon counting detectors are much sharper because of an improved MTF or less “smear out” with the advantage that the enhanced signal/noise ratio makes visible what was previously unseen due to noise.
Cadmium Telluride (CdTe) – CMOS technology
The core component in our detectors is a direct conversion material, which converts the X-rays directly into electrical signals, and a CMOS (ASIC) which transforms the electrical signals into a data stream of either the integrated electrical charge or the number of photons which has entered each pixel. This data is then used to create a digital image which is either two- or three- dimensional, depending on the scan geometry.
Our detectors use cadmium telluride (CdTe) as the direct conversion material. When X-ray photons enter the CdTe they displace electrons. An electric field across the CdTe draws the resulting charge to an ASIC (CMOS) which is bonded to the CdTe. This electric signal is captured, measured and finally processed into an image.
The provides significantly better Modulation Transfer Function (MTF) and Detection Quantum Efficiency (DQE) compared to scintillation detectors due to the high sensitivity, conversion efficiency and high energy photon stopping power of CdTe.
We supply detectors that support integrating as well as photon counting modes, enabling low dose imaging, dual energy imaging, high energy imaging and ultra fast imaging.